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Snubber Clamping Capacitors for G.T.O & Thyristors

سلسلة: CBB20
مجموعة العمل الجهد: 800～2000Vdc
السعة المدى: 0.33uF~6uF
درجة حرارة العمل: -40～+85/105℃
تحميل الحياة: -
تطبيق: Protection of thyristors. Protection of gate turn-off thyristor (G.T.O.). Clamping (Secondary snubber)

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مقدمة المنتج
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■ مقدمة المنتج

Snubber Clamping Capacitors Especially Used for G.T.O & thyristors

Feature:
● Metallized polypropylene film wound, non-inductive instruction.
● Special metallized structure can effectively enhance dv/dt property and eliminate ionization communication.
Application:
● Protection of thyristors. Protection of gate turn-off thyristor (G.T.O.). Clamping (Secondary snubber) .
Construction:
● Dry, solid state construction.
● Low ESR and high dv/dt.
● Withstanding very high peak to peak value of current Ipp and high frequency effective value of current Irms.

■ Specification

	Cn (μF)	Dimensions mm					Irms max (A)	RS (mΩ)
	Cn (μF)	Type Terminal Lugs	H±2	h±2	Dmax	d±0.5	Irms max (A)	RS (mΩ)
Un=800Vdc Upeak=1200V Urms=500V Us=1500V	2	M8/8	52	5	55	22	30	1.2
	3	M8/8	52	5	66	22	45	0.9
	3.5	M8/8	52	5	72	22	50	0.85
	4	M8/8	52	5	76	22	60	0.75
	5	M8/8	52	5	85	22	70	0.65
	6	M8/8	52	5	92	22	75	0.6
Un=1000Vdc Upeak=1600V Urms=600V Us=2000V	1.5	M8/8	52	5	56	22	30	1.5
	2	M8/8	52	5	63	22	40	1.1
	2.5	M8/8	52	5	72	22	60	0.89
	3	M8/8	52	5	76	22	60	0.85
	3.5	M8/8	52	5	82	22	65	0.78
	4	M8/8	52	5	92	22	70	0.7
	1	M6/6	62	5	45	16	18	3
Un=1300Vdc Upeak=2000V Urms=700V Us=2500V	1.5	M8/8	62	5	53	22	25	2
	2	M8/8	62	5	62	22	35	1.5
	2.5	M8/8	62	5	68	22	40	1.3
	3	M8/8	62	5	74	22	50	1.15
	4	M8/8	62	5	92	22	65	0.95
Un=2000Vdc Upeak=2400V Urms=1000V Us=3500V	0.33	M6/6	63	5	42	16	15	2.5
	0.5	M6/6	63	5	52	16	19	2.5
	1	M8/8	63	5	70	22	38	1.4
	1.5	M8/8	63	5	85	22	56	1.1
	2	M8/8	63	5	98	22	75	0.85

Rated Voltage: 800VDC, 1000VDC, 1300VDC, 2000VDC.
Rated Capacitance: 0.33uF, 0.5uF, 1uF, 1.5uF, 2uF, 2.5uF, 3uF, 3.5uF, 4uF, 4.5uF, 5uF, 5.5uF, 6uF, 6.5uF

Datasheet(PDF) of Snubber Clamping Capacitors, please contact us.

■ How To Order

Send us the Specification, for example, 2uF 2000VDC.

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